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Insulated Gate Bipolar Transistor IGBT Theory and Design
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Author:
Vinod Kumar KhannaNumber Of Reads:
44
Language:
English
Category:
fieldsSection:
Pages:
642
Quality:
excellent
Views:
651
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Book Description
A comprehensive and state-of-the-art coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Vinod Kumar Khanna
Vinod Kumar Khanna born on November 25, 1952 at Lucknow, Uttar Pradesh, India, is an Emeritus Scientist at CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan, India, and Emeritus Professor, AcSIR (Academy of Scientific and Innovative Research), India. He is former Chief Scientist and Head, MEMS and Microsensors Group, CSIR-CEERI, Pilani, and Professor, AcSIR. During his service tenure of more than 34 years at CSIR-CEERI, starting from April 1980, he worked on various research and development projects on power semi- conductors devices (high-current and high-voltage rectifier, high-voltage TV deflection transistor, power Darlington transistor, fast switching thyristor, power DMOSFET and IGBT), PIN diode neutron dosimeter and PMOSFET gamma ray dosimeter, ion-sensitive field-effect transistor (ISFET), microheater-embedded gas sensor, capacitive MEMS ultrasonic transducer (CMUT), and other MEMS devices. His research interests were micro- and nanosensors, and power semiconductor devices. From 1977 to 1979, he was Research Assistant in the Physics Department, Lucknow University. Dr. Khanna’s deputations abroad include Technische Universität Darmstadt, Germany, 1999; Kurt-Schwabe-Institut für Mess- und Sensortechnik e.V., Meinsberg, Germany, 2008; and Institute of Chemical Physics, Novosibirsk, Russia, 2009. He also participated and presented research papers at IEEE-IAS Annual Meeting, Denver, Colorado, USA, 1986. Dr. Khanna received his M.Sc. degree in Physics with specialization in Electronics from the University of Lucknow in 1975, and Ph.D. degree in Physics from Kurukshetra University, Kurukshetra, Haryana, in 1988 for his work on thin-film aluminum oxide humidity sensor. A fellow of the Institution of Electronics and Telecommunication Engineers (IETE), India, he is a life member of Indian Physics Association (IPA), Semiconductor Society (SSI), India and Indo-French Technical Association. Dr. Khanna has published nine books, six chapters in edited books, and 181 research papers in national/international journals and conference proceedings; he holds two US and two Indian patents.
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